偉哥 asked in 社會與文化語言 · 1 decade ago

誰可以幫我翻譯一下拜託!!Orz

我已經翻譯了其他的部份,而這些是我不知道該如何翻的,請大家幫忙,謝謝了,還蠻急著要的拜託。

Gold traps electrons and holes in Si and poses a serious contamination problem for Si complementary metal oxide semiconductor (CMOS) processing.

When a vapour-phase Si precursor is introduced at a substrate temperature above the eutectic point (that is, the lowest temperature at which the Au–Si mixture will melt, see Fig. 1), the catalyst particles become supersaturated with Si and crystalline Si nanowires will nucleate out of the melt and grow.

This liquid particle serves as the preferential site for adsorption of the Si from the vapour precursor species.

VSS growth has been reported for TiSi2-catalysed Si nanowires, SiOx-catalysed InAs and Au-catalysed InAs and GaAs nanowires.

First, the growth temperature can be lowered to the technologically important regime below 500 C, and second, the solubility of Si in the catalyst particle is reduced by about one order of magnitude. This low Si solubility of about 2% might become decisive if, for example, Si–Ge heterostructure nanowires with sharp interfaces are to be produced.

A considerable reduction of the eutectic temperature due to size effects is not expected, as these only become significant for diameters less than 10 nm, whereas the catalyst particles in our experiment typically have diameters of ~35 nm.

等等還有一個接續的

Update 2:

謝謝紫薰的幫忙,但是我需要順一點的句子,不過還是要謝謝你

其他人也盡量幫幫我吧!!

1 Answer

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  • 1 decade ago
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    並且,為了金製的圈套電子,Si相侯補的金屬氧化膜半導體(CMOS)處理的Si挖,引起重大的污染問題。

    蒸氣階段Si前導什麼時候一起以晶上面的基板溫度被介紹指。(那個是那樣,最低氣溫,哪個,Au和#8211; Si混合物,溶化,與Si一起過飽和被做,圖1),觸媒粒子變成,水晶的Si nanowires在溶融外邊明白有核,增長?

    這個液體粒子作為為了Si的吸著的優先的網站從蒸氣前導種有作用。

    VSS的增長為了根據TiSi2促進了的Si nanowires,根據SiOx促進了的InAs,根據Au促進了的InAs,和鎵·砒霜nanowires的報告了。

    對首先在最初時,技術地重要的500C的政權能把增長溫度下降,並且,對第2號,觸媒粒子中的Si的溶度減少大概1位。 大概2%的這個低Si溶度譬如,如果是Si和#8211說不定變得決定的;尖的界面處於的gehetero構造nanowires被生產的。

    在由於尺寸效果的一起晶溫度相當的減少不被期待,通常,我們的實驗的觸媒粒子35nm有 ̄的直徑這些只是對不滿10nm的直徑變得重要的時候。

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