ZEN asked in 社會與文化語言 · 1 decade ago

材料化學翻譯問題 麻煩幫忙

Most of the reports focus on obtaining the single-crystal ZnO thin films, while there is

little attention paid to amorphous and nanocrystalline ZnO. However, nanocrystalembedded

ZnO thin films possess some unique advantages over bulk crystalline ZnO

thin films. Here we report the blueshift of the optical bandgap of nanocrystalembedded

ZnO thin films grown at various temperatures.

大多數的報告焦點在獲得單晶的ZnO薄膜,然而也有少數的討論到非晶和奈米結晶的ZnO。

將討論在各種不同的溫度下Blueshift的光學能隙。

ZnO Properties

• Large direct bandgap (3.377 eV).

• Large exciton binding energy (60 meV).

• Low deposition temperature (<600oC).

• Availability of bandgap tailoring by alloying Cd and Mg (2.8 eV – 4.0 eV).

• Superior in thermal stability, chemical resistance, radiation resistance and oxidation.

寬廣的直接能隙 (3.377 eV)

較高的激子束縛能(60 meV).

低成膜溫度(<600oC)

Availability of bandgap tailoring by alloying Cd and Mg (2.8 eV – 4.0 eV).

在熱穩定性、化學電阻、抗輻射、氧化方面優越

退火後,如果有參雜到環境中的N2和O2就在500OC燒結10分鐘。

EXPERIMENT

Growth parameters:

Substrate used: fused quartz (SiO2)

Growth temperature: 200 to 500oC with an increment of 50oC

Precursors used: 30 sccm of Dimethylzinc (DMZn) carried by N2, and 20 sccm of O2

Chamber pressure: 30 mbar

Growth duration: 10 mins

Post-annealing, if any, was carried out in a mixed N2 and O2 ambient at 500oC for 10 mins.

基材:熔化石英(SiO2)

發展溫度:200 to 500oC with an increment of 50oC

Precursors used: 30 sccm of Dimethylzinc (DMZn) carried by N2, and 20 sccm of O2

壓力艙:30 mbar

發展時間:10分鐘

這是我翻譯完的 麻煩幫我修正 謝謝

Update:

Availability of bandgap tailoring by alloying Cd and Mg (2.8 eV – 4.0 eV).

這句 是什麼意思 翻不出來><"

1 Answer

Rating
  • Nano
    Lv 4
    1 decade ago
    Favorite Answer

    其實你大致上大部分主要觀念都能抓到了,建議您不妨用自己的意思來翻譯比較通順。

    如: 此篇是探討氧化鋅薄膜製備與在不同煅燒溫度下所表現的藍移光學特性,然而最近研究主要針對於單晶矽的探討,但少部分也有研究探討非晶矽與多晶矽的探討。

    Large exciton binding energy (60 meV). =>高的電子束縛能

    Large direct bandgap (3.377 eV).=>高電子能隙

    Precursors used: 30 sccm of Dimethylzinc (DMZn) carried by N2, and 20 sccm of O2=> 前驅物:30sccm(0度C下每分鐘的流量c.c.)的DMZn,載流氣體為氮氣與20CC的氧氣

    Growth duration: 10 mins =>翻為反應時間較好

    2007-12-02 16:43:25 補充:

    意思為氧化鋅的電子能隙較高(3.377eV),若從價帶(valence band)到傳導帶(conduction band)則需較高的能量,因此可參雜鎘或鎂等元素降低電子能隙 (3.377->2.8 eV),可降低激發成導帶的能量,這也就是為何許多光觸媒的研究要參雜一些過渡金屬,其目的皆為降低其電子能隙。氧化鋅也為一種優良的光觸媒,但礙於電子能隙較高,因此許多學者在研究參雜過渡金屬的氧化鋅的原因,我認為此篇PAPER應是研究這方面的題目,並利用不同的鍛燒溫度來探討能隙的差異 與原因。

    Source(s): 也研究過氧化鋅..., 作研究很有趣吧 ^^
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